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PolarHT TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTK 180N15P
V DSS = 150 V
I D25 = 180 A
R DS(on) ≤ 10 m ?
Symbol
Test Conditions
Maximum Ratings
TO-264 (IXTK)
V DSS
V DGR
V DSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Continuous
Transient
100
100
± 20
± 30
V
V
V
V
I D25
I D(RMS)
T C = 25 ° C
External lead current limit
180
75
A
A
G
D
S
(TAB)
I DM
T C = 25 ° C, pulse width limited by T JM
380
A
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
60
100
4
10
A
mJ
J
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
T J ≤ 150 ° C, R G = 4 ?
Features
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
800
-55 ... +175
175
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
M d
Mounting torque
1.13/10 Nm/lb.in.
Advantages
Weight
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
10 g
Characteristic Values
Min. Typ. Max.
l
l
l
Easy to mount
Space savings
High power density
BV DSS
V GS = 0 V, I D = 250 μ A
150
V
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 500 μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.5
5.0
± 200
25
250
V
nA
μ A
μ A
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
10
m ?
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DS99297E(12/05)
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